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RFD3055LE, RFD3055LESM
Data Sheet
N-Channel Logic Level Power MOSFET
60V, 11A, 107 m?
These N-Channel enhancement-mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49158.
Ordering Information
September 20 13
Features
? 11A, 60V
? r DS(ON) = 0.107 ?
? Temperature Compensating PSPICE ? Model
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
PART NUMBER
RFD3055LE
PACKAGE
TO-251AA
BRAND
F3055L
RFD3055LESM 9A
TO-252AA
F3055L
G
S
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
?2002 Fairchild Semiconductor Corporation
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
RFD3055LE, RFD3055LESM Rev. C0
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相关代理商/技术参数
RFP3055LE 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220
RFP3055LE_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFP3055LES2357 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFP3055RLE 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-220AB
RFP3055RLEP2 制造商:Harris Corporation 功能描述:
RFP30N06LE 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFP30N06LE 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220
RFP30N06LE_NL 制造商:Fairchild Semiconductor Corporation 功能描述: